SCALE Mechanisms of Destructive Single-Event Effects in Wide Bandgap Devices

This presentation details the mechanisms behind Single-Event Effects (SEE) – specifically destructive Single-Event Burnout (SEB) – in wide bandgap semiconductor devices like SiC and GaN. The core argument is that SEB isn't primarily driven by the breakdown voltage itself (achieved through epitaxial design), but by the amount of energy stored within the drain-body depletion region. These devices, designed for high power density, inherently store significant energy, and a localized ionization event (like a heavy ion strike) releases this energy rapidly, causing damage. This behavior is increasingly similar to oxide breakdown as bandgap widens, suggesting a shift in dominant failure mechanisms.
The presentation highlights that SEB voltage appears relatively consistent across different device fabrication processes and doping levels, implying stored energy is the primary driver, not specific defect concentrations. While leakage current can increase with radiation exposure, it doesn't significantly alter the SEB voltage. This suggests focusing on managing stored energy – potentially through device geometry or novel materials – may be more effective than attempting to solely increase breakdown voltage to mitigate destructive SEE in these wide bandgap power devices.