Technology Characterization and Radiation-Enabled Modeling

The lecture discusses the importance of technology characterization in understanding the radiation response of advanced technologies. With the increasing complexity of modern electronics, it's becoming essential to use on-chip measurement techniques to characterize single event effects (SEEs), total ionizing dose (TID), and transient photocurrents. These measurements are used to validate radiation-enabled model behaviors for circuit design, allowing designers to make informed choices about filtering or other techniques to mitigate radiation-induced errors.
The lecture highlights the exciting opportunities in technology characterization and radiation-enabled modeling. By developing on-chip measurement techniques and incorporating observed mechanisms from testing and TCAD into models, designers can predict circuit response and supplement test data results. This enables first-pass success and reduces the need for costly re-designs. The use of Monte Carlo tools and SPICE models is also discussed as a means to simulate charge transport and calculate circuit responses to radiation-induced errors. Overall, the lecture emphasizes the importance of technology characterization in ensuring the reliability and robustness of modern electronics in harsh radiation environments.