Herbert Gingold of the University of Central Florida presented at the Vanderbilt Seminar Series.
Radiation effects in advanced electronics pose critical challenges for space‑borne and defense systems, where exposure to ionizing particles can degrade performance or cause catastrophic failure. Understanding how heterogeneous integration and state‑of‑the‑art packaging influence both susceptibility and resilience is essential for designing reliable microelectronics that operate in harsh radiation environments.
The presentation examines the physical mechanisms of total ionizing dose, displacement damage, and single‑event effects, linking them to material choices and device architectures used in heterogeneous integration. It evaluates advanced packaging strategies such as 3‑D stacking, through‑silicon vias, and metalization‑layer shielding, highlighting how local shielding concepts modify the effective radiation cross‑section. Quantitative trade‑offs are discussed, including the impact of shielding thickness on mass, thermal budget, and signal integrity, as well as the limitations of current radiation‑hardening packaging solutions. The talk also explores simulation tools and experimental methodologies for assessing cross‑section reduction and for optimizing protection of critical circuitry such as graphics, AI accelerators, and wireless transceivers.
Armed with this knowledge, learners can articulate the constraints of existing radiation‑hardening packaging, compare heterogeneous integration approaches for specific radiation environments, and evaluate the trade‑offs inherent in cross‑section reduction strategies. They are equipped to devise protection schemes that safeguard essential circuit blocks in extreme radiation fields and to discuss the role of local shielding, including metalization stacking, in practical system designs.