An Emerging Silicon Carbide Ecosystem for Harsh Environment Electronics

The material properties of silicon carbide (SiC) have been well-documented for power semiconductor device applications. Many investigators have utilized these devices in prototypes demonstrating the system--level savings and converter efficiencies that are unmatched with silicon.  However, it is still not possible for researchers, small businesses, and evey most large businesses and government labs to perform low-volume prototyping in this technology due to the lack of an open fab facility for such activities. This talk will describe how this gap is being filled not only fo rpower devices, but also for low-voltage microelectronics that can survive harsh environments compared to silicon. This talk will illuminate the audience on the possibilities for a new era in wide bandgap research, development and production prototyping never before available.