High Electron Mobility Transistors

This lecture introduces High Electron Mobility Transistors (HEMTs), focusing on their material systems, band structure, and device physics. Topics include compound semiconductor heterostructures, modulation doping, and carrier transport in III-V materials. Students conduct on-wafer measurements using probe stations and semiconductor parameter analyzers, and simulate 1D energy band diagrams using Nextnano for both InAlAs/InGaAs and AlGaN/GaN HEMTs. The course emphasizes real-world application through lab activities and analysis of key performance metrics such as ID-VGS, IDVDS, fT, fmax, and noise figure, with relevance to RF, millimeter-wave, and potential quantum computing applications.