Professor Hugh Barnaby of Arizona State University delivered this lecture for the Introduction to Radiation Effects Engineering online SCALE course.
Radiation‑induced degradation of semiconductor devices demands a rigorous multiscale approach that links material‑level interactions to system‑level performance. Technology Computer‑Aided Design (TCAD) and mixed‑mode simulation tools provide the computational framework for evaluating these effects across the hierarchy of environments, defects, and device structures. Mastery of these tools is essential for engineers designing reliable electronics for space, aerospace, and harsh‑environment applications.
The resource delves into the hierarchical modeling of radiation effects, beginning with Monte‑Carlo environment generators that superimpose particle fluxes on material structures. It demonstrates the construction of a TCAD workflow using Silvaco’s DeckBuild GUI to produce input decks, run device simulators, and generate both log files (electrical I‑V characteristics) and structure files (solution data). Visualization of internal fields and carrier distributions is performed with the Tony Plot utility, while sensitivity analysis modules identify the most critical device parameters influencing radiation tolerance. Throughout, the discussion emphasizes the interpretation of log versus structure outputs to diagnose failure mechanisms.
Armed with this knowledge, learners can articulate the full hierarchy of radiation effects and devise complete TCAD simulation workflows for semiconductor devices. They become proficient at extracting and interpreting log and structure files, conducting sensitivity analyses to pinpoint pivotal design variables, and rigorously comparing simulated predictions with experimental measurements. This capability enables informed engineering decisions for robust device design in radiation‑rich environments.